Vol 1, No 1 (2019)

Comparative Study of Electron Mobility Response in Flexible Thin Film Transistors under Mechanical Bending

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Authors:-Abhishek Aradhya P, Girish A Koushik

Abstract:-In this paper, the change in the performance characteristics with various mechanical bending conditions for different flexible Thin-Film Transistors (TFTs) is compared. Bending strains induce modifications of the localized density of states (DOS) which in turn cause changes in the electrical characteristics of the TFTs. The change in the characteristics is estimated as a function of curvature radius of the channel. For amorphous silicon, field-effect mobility decreases by bending, e.g., ~11% with a radius at R = 30 mm and a knee voltage increases, while a threshold voltage remains the same. While the mobility, threshold voltage, and sub threshold slope of IGZO TFTs remained essentially unchanged over the entire bending range, the electrical performance parameters of ZnO TFTs were strongly degraded by bending. For ZnO TFTs bent to a radius of 10 mm, the mobility decreased by more than two orders of magnitude.

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